• Login
    View Item 
    •   DSpace Home
    • College of Engineering (CEN)
    • Department of Electrical Engineering
    • View Item
    •   DSpace Home
    • College of Engineering (CEN)
    • Department of Electrical Engineering
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    TCAD Simulation and Analysis of Selective Buried Oxide MOSFET Dynamic Power

    Thumbnail
    View/ Open
    jlpea-09-00029-v2.pdf (3.618Mb)
    Date
    2019
    Author
    Mahmoud, Rana
    Narayanan, Madathumpadical
    Al-Nashash, Hasan
    Advisor(s)
    Unknown advisor
    Type
    Peer-Reviewed
    Article
    Published version
    Metadata
    Show full item record
    Abstract
    Low power consumption has become one of the major requirements for most microelectronic devices and systems. Increasing power dissipation may lead to decreasing system effciency and lifetime. The BULK metal oxide semiconductor field-effect transistor (MOSFET) has relatively high power dissipation and low frequency response due to its internal capacitances. Although the silicon-on-insulator (SOI) MOSFET was introduced to resolve these limitations, other challenges were introduced including the kink effect in the current-voltage characteristics. The selective buried oxide (SELBOX) MOSFET was then suggested to resolve the problem of the kink effect. The authors have previously investigated and reported the characteristics of the SELBOX structure in terms of kink effect, frequency, thermal and static power characteristics. In this paper, we continue our investigation by presenting the dynamic power characteristics of the SELBOX structure and compare that with the BULK and SOI structures. The simulated fabrication of the three devices was conducted using Silvaco TCAD tools in 90 nm complementary metal oxide semiconductor (CMOS) technology. Simulation results show that the average dynamic power dissipation of the CMOS BULK, SOI and SELBOX are compatible at high frequencies with approximately 54.5 μW. At low frequencies, the SOI and SELBOX showed comparable dynamic power dissipation but with lower values than the BULK structure. The difference in power dissipation between the SELBOX and BULK is in the order of nano watts. This power difference becomes significant at the chip level. For instance, at 1 MHz, SOI and SELBOX exhibit an average dynamic power consumption of 0.0026 μWless than that of the BULK structure. This value cannot be ignored when a chip operates using thousands or millions of SOI or SELBOX MOSFETs.
    DSpace URI
    http://hdl.handle.net/11073/16612
    External URI
    https://doi.org/10.3390/jlpea9040029
    Collections
    • Department of Electrical Engineering
    • Faculty Work (AUS Sustainability)

    Browse

    All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsCollege/DeptArchive ReferenceSeriesThis CollectionBy Issue DateAuthorsTitlesSubjectsCollege/DeptArchive ReferenceSeries

    My Account

    LoginRegister

    Statistics

    View Usage Statistics

    DSpace software copyright © 2002-2016  DuraSpace
    Submission Policies | Terms of Use | Takedown Policy | Privacy Policy | About Us | Contact Us | Send Feedback

    Return to AUS
    Theme by 
    Atmire NV