| dc.contributor.author | Lee, Michael V. | |
| dc.contributor.author | Husseini, Ghaleb | |
| dc.contributor.author | Sautter, Ken | |
| dc.contributor.author | Linford, Matthew R. | |
| dc.date.accessioned | 2021-03-04T07:53:01Z | |
| dc.date.available | 2021-03-04T07:53:01Z | |
| dc.date.issued | 2012 | |
| dc.identifier.citation | Lee, M. V., Husseini, G., Sautter, K., & Linford, M. R. (2010). Gas Phase Deposition of Trichloro(1H,1H,2H,2H-perfluorooctyl)silane on Silicon Dioxide, by XPS. Surface Science Spectra, 17(1), 87-92. https://doi.org/10.1116/11.20071103 | en_US |
| dc.identifier.issn | 1055-5269 | |
| dc.identifier.uri | http://hdl.handle.net/11073/21342 | |
| dc.description.abstract | Monolayers of trichloro(lH,1H,2H,2H-perfluorooctyl)silane, Cl3SiCH2CH2(CF2)5CF3, were deposited via chemical vapor deposition onto the native oxide layer on silicon after plasma-cleaning. The samples have high hydrophobicity, and provide a valuable comparison to perfluorinated alkyl silane layers obtained by liquid deposition. Gas-phase deposition of perfluorinated alkyl silanes is a useful means for reducing stiction in micro- and nano-electromechanical systems, which have narrow spaces that can trap bubbles and prevent liquid-based silane passivation. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | American Vacuum Society | en_US |
| dc.relation.uri | https://doi.org/10.1116/11.20071103 | en_US |
| dc.subject | Perfluorinated silane | en_US |
| dc.subject | Gas-phase | en_US |
| dc.subject | Native silicon dioxide | en_US |
| dc.title | Gas Phase Deposition of Trichloro(1H,1H,2H,2H-perfluorooctyl)silane on Silicon Dioxide, by XPS | en_US |
| dc.type | Peer-Reviewed | en_US |
| dc.type | Article | en_US |
| dc.type | Published version | en_US |
| dc.identifier.doi | 10.1116/11.20071103 | |
