dc.contributor.author | Husseini, Ghaleb | |
dc.contributor.author | Sathyapalan, Amarchand | |
dc.contributor.author | Sevy, Eric T. | |
dc.contributor.author | Linford, Matthew R. | |
dc.contributor.author | Asplund, Matthew C. | |
dc.date.accessioned | 2021-03-04T05:51:55Z | |
dc.date.available | 2021-03-04T05:51:55Z | |
dc.date.issued | 2002 | |
dc.identifier.citation | Husseini, G. A., Sathyapalan, A., Sevy, E. T., Linford, M. R., & Asplund, M. C. (2001). Alkyl Monolayers on Silica Surfaces Prepared from Neat, Heated ClSi(CH₃)₂(CH₂)₆CH=CH₂ Analyzed by XPS. Surface Science Spectra, 8(4), 284-290. https://doi.org/10.1116/11.20020503 | en_US |
dc.identifier.issn | 1055-5269 | |
dc.identifier.uri | http://hdl.handle.net/11073/21331 | |
dc.description.abstract | Silane monolayers on silica, prepared from mono-, di-, and trichlorosilanes, are widely used in industry for surface functionalization and modification. However, unlike di-and trichlorosilanes, monochlorosilanes are particularly easy to work with because they can dimerize, but not polymerize, upon reaction with water. Typically, an organic solvent is used when depositing a silane monolayer. Here we show XPS spectra of monolayers of ClSi(CH₃)₂(CH₂)₆CH=CH₂ (octenyldimethylchlorosilane, CAS# 17196-12-2) on silicon oxide (silicon wafer) prepared using a rapid, solvent-free approach. Reaction conditions are 120 °C for 10 min using the neat (pure) compound, and no inert atmosphere or special treatment of the compound is required. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | American Vacuum Society | en_US |
dc.relation.uri | https://doi.org/10.1116/11.20020503 | en_US |
dc.subject | X-ray photoelectron spectroscopy | en_US |
dc.subject | Silane | en_US |
dc.subject | Alkylation | en_US |
dc.subject | Monochlorosilanes | en_US |
dc.title | Alkyl Monolayers on Silica Surfaces Prepared from Neat, Heated ClSi(CH₃)₂(CH₂)₆CH=CH₂ Analyzed by XPS | en_US |
dc.type | Peer-Reviewed | en_US |
dc.type | Article | en_US |
dc.type | Published version | en_US |
dc.identifier.doi | 10.1116/11.20020503 | |